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SIHK045N60E-T1-GE3

Varianty produktu

Product Attribute	Attribute Value	Search Similar
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	SIHK045N60E-T1-GE3
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPak-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	49 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	278 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	14 ns
Product Type:	MOSFET
Rise Time:	40 ns
	2000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	67 ns
Typical Turn-On Delay Time:	35 ns

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